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TPC8A07-H
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V -H)
TPC8A07-H
High Efficiency DC-DC Converter Applications Notebook PC Applications Portable-Equipment Applications
* * * * * * Small footprint due to a small and thin package High-speed switching Small gate charge: (Q1) QSW = 3.4 nC (typ.) (Q2) QSW = 3.6 nC (typ.) Low drain-source ON-resistance: (Q1) RDS (ON) = 21 m (typ.) (Q2) RDS (ON) = 14 m (typ.) Low leakage current: (Q1) IDSS = 10 A (max) (VDS = 30 V) (Q2) IDSS =100A (max) (VDS = 30 V) Enhancement mode: (Q1) Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1.0 mA) (Q2) Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD 2) EAS IAR EAR Tch Tstg 60.1 6.8 0.11 150 -55 to 150 Rating (Q1) 30 30 20 6.8 27.2 1.5 W 1.1 0.75 W 0.45 94 8.5 0.09 mJ A mJ C C (Q2) 30 30 20 8.5 34 Unit V V V A
JEDEC JEITA TOSHIBA
2-6J1E
Drain power dissipation Single-device value (t = 10 s) (Note 2a) at dual operation (Note 3b) Single-device Drain power operation (Note 3a) dissipation Single-device value (t = 10 s) (Note 2b) at dual operation (Note 3b) Single-pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy (Note 2a, Note 3b, Note 5) Channel temperature Storage temperature range
Single-device operation (Note 3a)
Weight: 0.085 g (typ.)
Circuit Configuration
Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating" Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care.
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TPC8A07-H
Thermal Characteristics
Characteristic Single-device operation (Note 3a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 83.3 Unit
Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Single-device value at dual operation (Note 3b)
114 C/W 167
Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Single-device value at dual operation (Note 3b)
Single-device operation (Note 3a)
278
Marking (Note 6)
TPC8A07 H
Part No. (or abbreviation code) Lot No. Note 7
Note 7: A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a)
FR-4 25.4 x 25.4 x 0.8 (unit: mm)
(b) Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (unit: mm)
(a)
(b)
Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.) Note 4: (Q1) VDD = 24 V, Tch = 25C (Initial), L = 1.0 mH, RG = 25 , IAR = 6.8 A (Q2) VDD = 24 V, Tch = 25C (Initial), L = 1.0 mH, RG = 25 , IAR = 8.5 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: * on the lower left of the marking indicates Pin 1. * Weekly code: (three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (the last digit of the year)
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TPC8A07-H
Q1 Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Gate resistance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss rg tr VGS Turn-on time Switching time Fall time tf toff Qg Qgs1 Qgd QSW VDD 24 V, VGS = 10 V, ID = 6.8 A ton VDS = 10 V, VGS = 0 V, f = 5 MHz VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 20 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1.0 mA VGS = 4.5 V, ID = 3.4 A VGS = 10 V, ID = 3.4 A VDS = 10 V, ID = 3.4 A Min 30 15 1.5 11 Typ. 21 17 22 830 54 180 1.7 2.2 Max 100 10 2.5 28 23 1100 82 2.6 pF Unit nA A V V V m S
10 V 0V 4.7
ID = 3.4 A RL = 4.4
7.7
ns
2.5
VDD 15 V Duty 1%, tw = 10 s VDD 24 V, VGS = 10 V, ID = 6.8 A VDD 24 V, VGS = 5 V, ID = 6.8 A 18 13 6.9 2.9 2.3 3.4 nC
Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("Miller") charge Gate switch charge
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = 6.8 A, VGS = 0 V Min Typ. Max 27.2 -1.2 Unit A V
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TPC8A07-H
Q2 Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Gate resistance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss rg tr VGS Turn-on time Switching time Fall time tf toff ton VDS = 10 V, VGS = 0 V, f = 5 MHz VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 20 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1.0 mA VGS = 4.5 V, ID = 4.3 A VGS = 10 V , ID = 4.3 A VDS = 10 V, ID = 4.3 A Min 30 15 1.3 13 Typ. 14 11 26 1100 50 320 1.9 2.1 Max 100 10 2.3 19 15 1400 75 2.9 pF Unit nA A V V V m S
10 V 0V 4.7
ID = 4.3 A RL = 3.49
7.8
ns
3.1
VDD 15 V Duty 1%, tw = 10 s VDD 24 V, VGS = 10 V, ID = 8.5 A VDD 24 V, VGS = 5 V, ID = 8.5 A VDD 24 V, VGS = 10 V, ID = 8.5 A 22 16 8.1 3.4 2.2 3.6 nC
Turn-off time Total gate charge (gate-source plus gate-drain) (Note 7) Gate-source charge 1 Gate-drain ("Miller") charge Gate switch charge
Qg Qgs1 Qgd QSW
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Peak forward current Forward voltage (diode) Pulse (Note 1) Symbol IFP VDSF Test Condition IDR = 1 A, VGS = 0 V IDR = 8.5 A, VGS = 0 V Min Typ. - 0.4 Max 34 - 0.6 - 1.2 Unit A V V
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TPC8A07-H
Q1
8 65 10 10 4 3.5 4.5
ID - VDS
3.3 Common source Ta = 25C Pulse test 3.2 3.1 20
865 10 4 4.5 16
ID - VDS
3.6 3.5 3.4 Common source Ta = 25C Pulse test
8
(A)
ID
6 3 4 2.9 2 VGS = 2.7 V 0
ID
(A)
12
3.3 3.2 3.1
Drain current
Drain current
8
4
3 VGS = 2.8 V 0 0.4 0.8 1.2 1.6 2
0
0.2
0.4
0.6
0.8
1
0
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
ID - VGS
15
VDS - VGS
0.4 Common source Ta = 25C Pulse test 0.3
(A)
ID
10
Drain-source voltage
Drain current
VDS
(V)
0.2
Common source VDS = 10 V Pulse test
5 Ta = -55C 100 25
ID = 6.8 A 0.1 3.4 1.7 0 0 2 4 6 8 10
0
0
1
2
3
4
5
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
Yfs - ID
1000 Common source VDS = 10 V Pulse test 100 Common source Ta = 25C Pulse test
RDS (ON) - ID
(S)
100
Drain-source ON-resistance RDS (ON) (m)
|Yfs|
4.5 V
Forward transfer admittance
Ta = -55C 10 100 25
10
VGS = 10 V
1
0.1 0.1
1
10
100
1 0.1
1
10
100
Drain current
ID
(A)
Drain current
ID
(A)
5
2009-07-21
TPC8A07-H
Q1
RDS (ON) - Ta
40 100
IDR - VDS (A) IDR
Common source Pulse test
Drain-source ON-resistance RDS (ON) (m)
32
ID = 1.7, 3.4, 6.8 A
10 4.5 1 VGS = 0 V
24 VGS = 4.5 V 16 VGS = 10 V 8 ID = 1.7, 3.4, 6.8 A
Drain reverse current
3 10
Common source Ta = 25C Pulse test 1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
0 -80
-40
0
40
80
120
160
Ambient temperature
Ta
(C)
Drain-source voltage
VDS
(V)
Capacitance - VDS
10000 2.5
Vth - Ta Vth (V) Gate threshold voltage
(pF)
2.0
1000
Ciss
C
1.5
Capacitance
Coss 100 Common source VGS = 0 V f = 1 MHz Ta = 25C 10 0.1 1 10 Crss
1.0
0.5
100
0 -80
Common source VDS = 10 V ID = 1 mA Pulse test -40 0 40 80 120 160
Drain-source voltage
VDS
(V)
Ambient temperature
Ta
(C)
PD - Ta
2.0
Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s
Dynamic input/output characteristics
30 12
(W)
(V)
PD
VDS
Drain power dissipation
20
12 24 10 Common source ID = 6.8 A 4 Ta = 25C Pulse test
1.0 (3)
0.5 (4)
0 0
40
80
120
160
0 0
3
6
9
12
0 15
Ambient temperature
Ta
(C)
Total gate charge
Qg
(nC)
6
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Gate-source voltage
(2)
Drain-source voltage
VDD = 6 V
8
VGS
1.5
(1)
VDS
(V)
TPC8A07-H
Q1
rth - tw
1000
Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) 100 (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b)
(4) (3) (2) (1)
Transient thermal impedance rth (C/W)
10
1
0.1 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse width
tw
(s)
Safe operating area
100 ID max (Pulse) * Single-device value at dual operation (Note 3b)
(A)
10 t =10 ms * 1
t =1 ms *
Drain current
ID
0.1
*Single-pulse Ta = 25C Curves must be derated linearly with increase in temperature.
0.01 0.1
VDSS max 10 100
1
Drain-source voltage
VDS
(V)
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TPC8A07-H
Q2 (Includes Schottky Barrier Diode)
8 10 10 65
4.5 4
ID - VDS
20 3 Common source Ta = 25C Pulse test
865 10
4.5 4 3.3
ID - VDS
3.2 Common source Ta = 25C Pulse test 3
8
(A)
2.8
ID
ID
(A)
2.9
16
3.1
6 2.7 4 2.6 2 VGS = 2.4 V 0 0 0.2 0.4 0.6 0.8 1
12
Drain current
Drain current
2.9 2.8 2.7
8
4
2.6 VGS = 2.4 V
0 0
0.4
0.8
1.2
1.6
2
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
ID - VGS
15
VDS - VGS
0.4 Common source Ta = 25C Pulse test 0.3
(A)
ID
10
Drain-source voltage
Drain current
VDS
(V)
0.2
Common source VDS = 10 V Pulse test
5 100
Ta = -55C 25
ID = 8.5 A 0.1
4.3 2.1
0
0
1
2
3
4
5
0 0
2
4
6
8
10
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
Yfs - ID
1000 Common source VDS = 10 V Pulse test 100 Common source Ta = 25C Pulse test
RDS (ON) - ID
(S)
100 Ta = -55C 10 100 25
Forward transfer admittance
Drain-source ON-resistance RDS (ON) (m)
|Yfs|
4.5 V 10 VGS = 10 V
1
0.1 0.1
1
10
100
1 0.1
1
10
100
Drain current
ID
(A)
Drain current
ID
(A)
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TPC8A07-H
Q2 (Includes Schottky Barrier Diode)
RDS (ON) - Ta
30 100
IDR - VDS (A)
Common source Pulse test
Drain-source ON-resistance RDS (ON) (m)
24 ID = 2.1, 4.3, 8.5 A 18 VGS = 4.5 V 12 VGS = 10 V 6 ID = 2.1, 4.3, 8.5 A
IDR
10 4.5 1
Drain reverse current
3 10
VGS = 0 V
Common source Ta = 25C Pulse test 1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
0 -80
-40
0
40
80
120
160
Ambient temperature
Ta
(C)
Drain-source voltage
VDS
(V)
Capacitance - VDS
10000 2.5
Vth - Ta Vth (V) Gate threshold voltage
(pF)
2.0
1000
Ciss
C
1.5
Capacitance
Coss 100 Common source VGS = 0 V f = 1 MHz Ta = 25C 1 10 Crss
1.0
0.5
10 0.1
100
0 -80
Common source VDS = 10 V ID = 1 mA Pulse test -40 0 40 80 120 160
Drain-source voltage
VDS
(V)
Ambient temperature
Ta
(C)
PD - Ta
2.0
Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s
Dynamic input/output characteristics
30 12
(W)
(V)
PD
VDS
Drain power dissipation
20
VDD = 6 V 12 24
8
1.0 (3)
10
0.5 (4)
Common source ID = 8.5 A 4 Ta = 25C Pulse test
0 0
40
80
120
160
0 0
4
8
12
16
0 20
Ambient temperature
Ta
(C)
Total gate charge
Qg
(nC)
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Gate-source voltage
(2)
Drain-source voltage
VGS
1.5
(1)
VDS
(V)
TPC8A07-H
Q2 (Includes Schottky Barrier Diode)
rth - tw
1000
Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) 100 (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b)
(4) (3) (2) (1)
Transient thermal impedance rth (C/W)
10
1
0.1 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse width
tw
(s)
Safe operating area
100 ID max (Pulse) * Single-device value at dual operation (Note 3b) t =1 ms *
(A)
10 t =10 ms *
Drain current
ID
1 0.1
*Single-pulse Ta = 25C Curves must be derated linearly with increase in temperature.
0.01 0.1
VDSS max 10 100
1
Drain-source voltage
VDS
(V)
10
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TPC8A07-H
Q2 (VGS= 0V)
IDR - VDSF
100
IDSS - Tch
100000 Pulse test VGS = 0 V
(typ.)
10 20
(A)
10000
IDR
(A)
Pulse test VGS = 0 V
IDSS
VDS = 30 V 5
Drain reverse current
10 75 Ta = 25C
Drain cutoff current
1
125
1000
100
1 0
0.2
0.4
0.6
0.8
10 0
40
80
120
160
Drain-source voltage
VDSF
(V)
Channel temperature
Tch
(C)
Tch - VDS
160
(C)
140 120 100 80 60 40 20 0 0
Pulse test VGS = 0 V
Channel temperature
Tch
10
20
30
40
Drain-source voltage
VDS
(V)
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TPC8A07-H
RESTRICTIONS ON PRODUCT USE
* Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. * Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact ("Unintended Use"). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. * Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. * Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. * The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. * ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. * Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.
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2009-07-21

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